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Ordering number : EN9006A
EMH2604
Power MOSFET
20V, 4A, 45m Ω , –20V, –3A, 85m Ω , Complementary Dual EMH8
Features
http://onsemi.com
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?
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Nch + Pch MOSFET
ON-resistance Nch : RDS(on)1=34m Ω (typ.)
Pch : RDS(on)1=65m Ω (typ.)
1.8V drive
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Conditions
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
N-channel
20
±10
4
20
1.0
1.2
P-channel
--20
±10
--3
--20
Unit
V
V
A
A
W
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
--55 to +150
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-002
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
8
0.2
5
0.125
EMH2604-TL-H
Packing Type : TL
Marking
FD
TL
LOT No.
1
0.5
4
2.0
1 : Source1
Electrical Connection
2 : Gate1
3 : Source2
8
7
6
5
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/60111PE TKIM TC-00002607 No.9006-1/9
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